关于绝缘栅双极晶体管开关速度，表述正确的是：
关于绝缘栅双极晶体管开关速度，表述正确的是：
A.绝缘栅双极晶体管IGBT是一种复合器件，其开关速度比GTR慢。
B.绝缘栅双极晶体管IGBT是一种复合器件，其开关速度比电力MOSFET更快。
C.绝缘栅双极晶体管IGBT是一种复合器件，其驱动电流很大。
D.绝缘栅双极晶体管IGBT是一种复合器件，其开关速度通常比GTR更快。
正确答案：绝缘栅双极晶体管IGBT是一种复合器件，其开关速度通常比GTR更快。
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